Jamiyanaa Dashdorj, Ph.D.

Photo of Jamiyanaa Dashdorj
Associate Professor of Physics
412-365-1345
Buhl - 234A

Hometown: UlanBator
Joined Chatham: August 2016

ACADEMIC AREAS OF INTEREST

Development and characterization of semiconductor materials, charge transfer processes, and atomic transport properties.

PERSONAL AREAS OF INTEREST

Soccer, chess and travel.

BIOGRAPHY

Jami Dashdorj studied and trained in Mongolia, Austria, Italy, and Brazil, before coming to U.S. for graduate school. He earned his Ph.D. in applied physics from Colorado School of Mines building a non-destructive minority carrier recombination lifetime mapping system at National Renewable Energy Laboratory. Prior to joining the faculty at Chatham, Dr. Dashdorj was a research associate at University of Alabama (Birmingham) investigating point defects and charge transfer mechanisms in GaN, SrTiO3, ZnSe and SiC using electron paramagnetic resonance spectroscopy. 

EDUCATION

  • PhD in Applied Physics, Colorado School of Mines
  • MS in Condensed Matter Physics, International Center for Theoretical Physics (Trieste, Italy)
  • BS in Physics, University of Mongolia (UlanBator)
AWARDS 
  • Italian Government Scholarship (Trieste, Italy)
  • International Atomic Energy Agency Fellowship (Vienna, Austria)
  • TWAS/CNPQ Fellowship for Visiting Scientist at Federal University of Parana (Curitiba, Brazil)
ORGANIZATIONS
  • American Physical Society (APS)
  • Materials Research Society (MRS)
SELECTED PUBLICATIONS
  • A. Viehland, H.R. Skullerud, M. Cordier, J. Dashdorj, and A. Trout,”Motion of NO+ ions in uniform electrostatic fields in the rare gases”, J. Phys. B: At. Mol. Opt. Phys. 54, 175202 (2021).
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  • R. Willoughby, M.E. Zvanut, J. Dashdorj, and M. Bockowski, “A model for Be-related photo-absorption in compensated GaN:Be substrates”, J. Appl. Phys. 120, 115701 (2016).
  • M. Poole, J. Dashdorj, M.E. Zvanut, and M.D. McCluskey, “Large persistent photoconductivity in strontium titanate at room temperature”, Mater. Res. Soc. Symp. Proc. 1792 (2015).
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  • V. Fedorov, T. Konak, J. Dashdorj, M.E. Zvanut, and S.B. Mirov, “Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals”, Opt. Mater. 37, 262, (2014).
  • Dashdorj, M.E. Zvanut, J.G. Harrison, K. Udwary, and T. Paskova, “Charge transfer in semi-insulating Fe-doped GaN”, J. Appl. Phys. 112, 013712 (2012).
  • Dashdorj, M.E. Zvanut, and L.J. Stanley, “Iron-related defect levels in SrTiO3 measured by photo-electron paramagnetic resonance spectroscopy”, J. Appl. Phys. 107, 083513 (2010).
  • Dashdorj, M.E. Zvanut, and J.G. Harrison, “Measurements of optical cross sections of carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance”, J. Appl. Phys. 104, 113707 (2008).
  • Metzger, R.K. Ahrenkiel, J. Dashdorj, and D.J. Friedman, “Analysis of charge separation dynamics in a semiconductor junction”, Phys. Rev. B 71, 035301 (2005).
  • Ahrenkiel and J. Dashdorj, “Interface recombination velocity measurement by a contactless microwave technique”, J. Vac. Sci. Technol. B 22(4), 2063 (2004).
SELECTED PRESENTATIONS
  • Dashdorj, L.A. Viehland, A. Lutfullaeva, and R. Johnsen, “Accurate gaseous ion mobility measurements”, 70th Annual Gaseous Electronics Conference, Pittsburgh, PA, 2017.
  • Dashdorj, M.E. Zvanut, and M.M. Bockowski, “EPR detected defect center in bulk GaN substrates grown by high pressure nitrogen solution method”, APS March Meeting, San Antonia, TX, 2015.
  • Dashdorj, M.E. Zvanut, J.G. Harrison, T. Paskova, and K. Udwary, “Thermal capture rate of electrons by Fe acceptor in GaN”, APS March Meeting, Dallas, TX, 2011.
  • Dashdorj, M.E. Zvanut, and J.G. Harrison, “Charge transfer kinetics of the carbon vacancy defect in 4H-SiC”, APS March Meeting, Pittsburgh, PA, 2009.
  • Dashdorj, M.E. Zvanut, and J. Harrison, “A defect relaxation model for the carbon vacancy in SiC”, APS March Meeting, New Orleans, LA, 2008.
  • Dashdorj and M.E. Zvanut, “Study of chromium impurities in SrTiO3 by photo-Electron Paramagnetic Resonance Spectroscopy”, MRS Fall Meeting, Boston, MA, 2007.
  • Dashdorj, R.K. Ahrenkiel, and W.K. Metzger, “Modeling of recombination lifetimes in charge-separation device structures”, MRS Fall Meeting, Boston, MA, 2003.